- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33494 > 2SK302 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236 PDF資料下載
參數(shù)資料
| 型號： | 2SK302 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | 2-3F1C, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 865K |
| 代理商： | 2SK302 |
2SK302
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK302
FM Tuner, VHF RF Amplifier Applications
Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
Low noise figure: NF = 1.7dB (typ.)
High power gain: Gps = 28dB (typ.)
Recommend operation voltage: 5~15 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±5
V
Drain current
ID
30
mA
Drain power dissipation
PD
150
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0 V, VGS = ±5 V
±50
nA
Drain-source voltage
VDSX
VGS = 4 V, ID = 100 μA
20
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0 V
1.5
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 100 μA
2.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0 V, f = 1 kHz
10
mS
Input capacitance
Ciss
3.0
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
0.035
0.050
pF
Power gain
GPS
28
dB
Noise figure
NF
VDS = 10 V, VGS = 0 V,
f
= 100 MHz (Figure 1)
1.7
3.0
dB
Note: IDSS classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
Unit: mm
JEDEC
TO-236
JEITA
―
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK302-Y | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236 |
| 2SK3051(2-10S1B) | 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3051(2-10S2B) | 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3056-ZJ | 32 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3056 | 32 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK302_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
| 2SK3020TP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 15A I(D) | TO-251VAR |
| 2SK3020TP-FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 15A I(D) | TO-252VAR |
| 2SK3021TP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251VAR |
| 2SK3021TP-FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。