參數(shù)資料
型號: 2SK3051(2-10S1B)
元件分類: JFETs
英文描述: 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220FL, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 153K
代理商: 2SK3051(2-10S1B)
2SK3051
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3051
Chopper Regulator DCDC Converter, and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 24 m (typ.)
High forward transfer admittance
: |Yfs| = 27 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 50 V)
Enhancementmode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
50
V
Draingate voltage (RGS = 20 k)
VDGR
50
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
45
A
Drain current
Pulse (Note 1)
IDP
135
A
Drain power dissipation (Tc
= 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
115
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 71 H, RG = 25 , IAR = 45 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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2SK3051(2-10S2B) 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
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