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參數(shù)資料
| 型號(hào)： | 2SK3000 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET Low Frequency Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管低頻功率開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK3000 |
2SK3000
5
0
4
8
12
16
20
200
500
100
10
20
50
5000
2000
500
1000
100
200
50
0.05
1
1
2
5
0.5
0.2
Drain Current I (A)
0.1
Ciss
Coss
Crss
V = 0
f = 1 MHz
500
200
50
100
10
20
5
0.05
1
5
4
3
2
1
0
0.4
0.8
1.2
1.6
2.0
V = 0
5 V
0.5
0.2
0.1
Surge Pulse Width PW (mS)
A
Drain to Source DiodeReverse Surge
Destruction Characteristics
10
5
2
50
20
Ta = 25°C
1 shot
10 V
5
2
V = 4 V, V = 10 V
PW = 5 μs, duty < 1 %
tf
d(on)
t
d(off)
t
r
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
S
Switching Characteristics
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3001 | GaAs HEMT Low Noise Amplifier |
| 2SK303 | Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) |
| 2SK304 | Low-Frequency Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) |
| 2SK3053 | Switching N-channel power MOS FET industrial use |
| 2SK3054 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3000ZY(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3000ZY-90TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3000ZY-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3001 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:GaAs HEMT Low Noise Amplifier |
| 2SK3002 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET |
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