參數(shù)資料
型號(hào)： 2SK2993(2-10S1B)
元件分類： JFETs
英文描述： 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-10S1B, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 440K
代理商： 2SK2993(2-10S1B)
2SK2993
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
—
82
105
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
10
20
—
S
Input capacitance
Ciss
—
4000
—
Reverse transfer capacitance
Crss
—
300
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1000
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
35
—
Fall time
tf
—
30
—
Switching time
Turnoff time
toff
—
180
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
100
—
Gatesource charge
Qgs
—
70
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 20 A
—
30
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
60
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
300
—
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / s
—
3.3
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2993
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK2993(2-10S1B) 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2996 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2998 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2SK3012 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3013 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2993-SM(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK2993TE24L 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 20A 3PIN TO-220FL/SM - Tape and Reel
2SK2995 功能描述:MOSFET N-CH 250V 30A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2995(F) 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N)IS 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3P
2SK2996 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB:B1DEGR
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