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參數(shù)資料
| 型號(hào)： | 2SK2991(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | 2SK2991(2-10S2B) |
2SK2991
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
1.35
1.50
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
4.0
—
S
Input capacitance
Ciss
—
780
—
Reverse transfer capacitance
Crss
—
60
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
200
—
pF
Rise time
tr
—
12
—
Turnon time
ton
—
25
—
Fall time
tf
—
15
—
Switching time
Turnoff time
toff
—
60
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
17
—
Gatesource charge
Qgs
—
11
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
—
6
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1400
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
9
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2991
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2991(TO-220FL) | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2993(2-10S1B) | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2993(2-10S1B) | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2996 | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2998 | 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2991-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2992(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 200V 1A SOT89 |
| 2SK2993 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2993(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A TO220FL |
| 2SK2993(SM,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A TO220SM |
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