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參數(shù)資料
| 型號： | 2SK2984 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | 2SK2984 |
The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SK2984
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D12356EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
Low on-resistance
R
DS(on)1
= 10 m
(
MAX.) (V
GS
= 10 V, I
D
= 20 A)
R
DS(on)2
= 15 m
(
MAX.) (V
GS
= 4.5 V, I
D
= 20 A)
Low C
iss
C
iss
= 2850 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2984
TO-220AB
2SK2984-S
TO-262
2SK2984-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
Note1
Gate to Source Voltage
Note2
V
DSS
30
V
V
GSS
±20
V
Drain Current (DC)
Drain Current (pulse)
Note3
I
D(DC)
±40
A
I
D(pulse)
±160
A
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Total Power Dissipation (T
c
= 25°C)
P
T
60
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes.1
V
GS
= 0 V
2
V
DS
= 0 V
3
PW
≤
10
μ
s, Duty Cycle
≤
1 %
.
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