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參數(shù)資料
| 型號(hào)： | 2SK2984-ZJ |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 64K |
| 代理商： | 2SK2984-ZJ |
4
2SK2984
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
/
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
V
GS
- Gate to Source Voltage - V
R
D
0
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
I
D
- Drain Current - A
R
D
20
1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
V
DS
= 10 V
Pulsed
1
10
10
100
1000
100
1000
10
10
15
Pulsed
30
10
100
Pulsed
0
V
DS
= 10 V
I
D
= 1 mA
- 50
0
50
100
150
0
1
Single Pulse
T
C
= 25
C
1.0
2.0
20
V
GS
=10 V
V
GS
= 4.5 V
1.5
0.5
10
T
ch
= -25
C
25
C
75
C
125
C
R
th(ch-a) = 83.3
C/W
R
th(ch-c) = 2.08
C/W
I
D
= 20 A
μ
μ
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