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參數(shù)資料
| 型號： | 2SK2983-S |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 65K |
| 代理商： | 2SK2983-S |
2
2SK2983
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DS(on)1
V
GS
= 10 V, I
D
= 15 A
13.0
20.0
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.5 V, I
D
= 15 A
18.0
27.0
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 15 A
9.0
19
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
1200
pF
Output Capacitance
C
oss
530
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
250
pF
Turn-on Delay Time
t
d(on)
50
ns
Rise Time
t
r
820
ns
Turn-off Delay Time
t
d(off)
100
ns
Fall Time
t
f
I
D
= 15 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
170
ns
Total Gate Charge
Q
G
30
nC
Gate to Source Charge
Q
GS
4.5
nC
Gate to Drain Charge
Q
GD
I
D
= 30 A
V
DD
= 24 V
V
GS
= 10 V
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 30 A, V
GS
= 0 V
0.8
V
Reverse Recovery Time
t
rr
35
ns
Reverse Recovery Charge
Q
rr
I
F
= 30 A, V
GS
= 0 V
di/dt = 100 A /
μ
S
65
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
GS
Wave Form
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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