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參數(shù)資料
| 型號(hào)： | 2SK2967 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 415K |
| 代理商： | 2SK2967 |
2SK2967
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 15 A
—
48
68
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
15
30
—
S
Input capacitance
Ciss
—
5400
—
Reverse transfer capacitance
Crss
—
580
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1900
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
50
—
Fall time
tf
—
35
—
Switching time
Turnoff time
toff
—
200
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
132
—
Gatesource charge
Qgs
—
80
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 30 A
—
52
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
30
A
Pulse drain reverse current
(Note 1)
IDRP
—
120
A
Forward voltage (diode)
VDSF
IDR = 30 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
270
—
ns
Reverse recovery charge
Qrr
IDR = 30 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
3.0
—
μC
Marking
K2967
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2967(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2967F | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2968 | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2968(F) | 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 10A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-3PN |
| 2SK2968(F,T) | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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