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參數(shù)資料
| 型號： | 2SK2967 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 415K |
| 代理商： | 2SK2967 |
2SK2967
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2967
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 48 m (typ.)
High forward transfer admittance
: |Yfs| = 30 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 250 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
30
A
Drain current
Pulse (Note 1)
IDP
120
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
925
mJ
Avalanche current
IAR
30
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2967(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2967F | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2968 | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2968(F) | 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 10A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-3PN |
| 2SK2968(F,T) | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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