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參數(shù)資料
| 型號： | 2SK2963 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-5K1B, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 2SK2963 |
2SK2963
2008-03-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-
π-MOS V)
2SK2963
DC-DC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.)
High forward transfer admittance: |Yfs| = 1.2 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC (Note 1)
ID
1
Drain current
Pulse (Note 1)
IDP
3
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
137
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic board (25.4 mm
× 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 221 mH, RG = 25 Ω, IAR = 1 A
Note 4: Repetitive rating: pulse width limited by maximum junction temperature.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch-a)
250
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2963(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin (3+Tab) PW-Mini 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) PW-Mini |
| 2SK2963(T2LSUMIS) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2963(T2LSUMIS,F | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2963(TE12L) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 1A PW-MINI |
| 2SK2963(TE12L,F) | 功能描述:MOSFET N-Ch 100V 1A Rdson 0.7 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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