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參數(shù)資料
| 型號(hào)： | 2SK2927 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 52K |
| 代理商： | 2SK2927 |
2SK2927
6
0.1
0.5
1
2
10
0.2
Reverse Drain Current I (A)
5
0
10
20
30
40
50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
4
8
12
16
20
0
1000
300
100
30
10
0.1
0.2
1
5
10
V = 50 V
25 V
10 V
500
200
100
20
50
10
5
I = 10A
V
GS
V
DS
3
1
0.5
2
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
20
20
di / dt = 50 A / μs
V = 0, Ta = 25 °C
V = 0
f = 1 MHz
Ciss
Coss
Crss
V = 50 V
25 V
10 V
r
V = 10 V, V = 30 V
PW = 5 μs, duty < 1 %
tf
d(on)
t
d(off)
t
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PDF描述 |
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| 2SK2928 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2929 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2930 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2931 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2932 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2927-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,10A,55m ohm,TO220AB 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2928-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2929-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2930-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2931-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220AB Box |
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