參數(shù)資料
型號(hào): 2SK2927
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 52K
代理商: 2SK2927
2SK2927
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
Note4
I
D
= 5A, V
GS
= 4V
Note4
I
D
= 5A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
10
μ
A
μ
A
Zero gate voltege drain current
10
Gate to source cutoff voltage
1.5
2.5
V
Static drain to source on state
0.055
0.075
resistance
0.090
0.150
Forward transfer admittance
5
8
S
Input capacitance
350
pF
Output capacitance
Coss
190
pF
Reverse transfer capacitance
Crss
70
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
10
ns
I
D
= 5A, V
GS
= 10V
R
L
= 6
Rise time
55
ns
Turn-off delay time
60
ns
Fall time
70
ns
Body–drain diode forward voltage
0.9
V
I
F
= 10A, V
GS
= 0
I
= 10A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
50
ns
相關(guān)PDF資料
PDF描述
2SK2928 Silicon N Channel MOS FET High Speed Power Switching
2SK2929 Silicon N Channel MOS FET High Speed Power Switching
2SK2930 Silicon N Channel MOS FET High Speed Power Switching
2SK2931 Silicon N Channel MOS FET High Speed Power Switching
2SK2932 Silicon N Channel MOS FET High Speed Power Switching
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參數(shù)描述
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