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參數(shù)資料
| 型號： | 2SK2912(S) |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 58K |
| 代理商： | 2SK2912(S) |
2SK2957(L),2SK2957(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
50
A
Drain peak current
I
D(pulse)
Note1
200
A
Body-drain diode reverse drain current
I
DR
50
A
Channel dissipation
Pch
Note2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
—
7.0
10
m
I
D = 25A, VGS = 10V
Note3
Static drain to source on state
resistance
R
DS(on)
—
1218m
I
D = 25A, VGS = 4V
Note3
Forward transfer admittance
|y
fs|
2545—
S
I
D = 25A, VDS = 10V
Note3
Input capacitance
Ciss
—
2000
—
pF
V
DS = 10V
Output capacitance
Coss
—
1500
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
350
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
20
—
ns
V
GS = 10V, ID = 25A
Rise time
t
r
—
330
—
ns
R
L = 0.4
Turn-off delay time
t
d(off)
—
190
—
ns
Fall time
t
f
—
190
—
ns
Body–drain diode forward voltage
V
DF
—
0.95
—
V
I
F = 50A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
60
—
ns
I
F = 50A, VGS = 0
diF/ dt =50A/
s
Note:
3. Pulse test
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| 2SK2912S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
| 2SK2915 | 功能描述:MOSFET N-CH 600V 16A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2915(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3PN Bulk |
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