參數(shù)資料
型號: 2SK2885S
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 4/7頁
文件大小: 38K
代理商: 2SK2885S
2SK2885(L), 2SK2885(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
0.1
0.3
1
3
10
30
100
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°
C
1 shot pulse
10
μ
s
100
μ
s
1ms
PW=10ms
DCOpeaion
(Tc=25
°
C
Operation in
this area is
limited by R
DS(on)
Pulse Width PW (S)
N
s
γ
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
DM
P
PW
T
D =T
ch – c = 1.67
°
C/W, Tc = 25
°
C
θ γ θ
θ
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
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