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參數(shù)資料
| 型號： | 2SK2885S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK2885S |
2SK2885(L), 2SK2885(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
—
—
10
μ
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
—
—
±
10
μ
A
V
GS
=
±
16V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 10V*
1
I
D
= 20A, V
GS
= 4V*
1
I
D
= 20A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state R
DS(on)
resistance
—
10
14
m
m
R
DS(on)
|y
fs
|
Ciss
—
15
25
Forward transfer admittance
20
30
—
S
Input capacitance
—
1570
—
pF
Output capacitance
Coss
—
1100
—
pF
Reverse transfer capacitance Crss
—
410
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
32
—
ns
V
GS
= 10V, I
D
= 20A
R
L
= 0.5
Rise time
—
300
—
ns
Turn-off delay time
—
180
—
ns
Fall time
—
200
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 45A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
75
—
ns
I
= 45A, V
= 0
diF/ dt = 50A/
μ
s
See characteristics curves of 2SK2737
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|---|---|
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