參數(shù)資料
型號: 2SK2869
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 6/10頁
文件大?。?/td> 52K
代理商: 2SK2869
2SK2869
6
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
8
16
24
32
40
0
1000
500
50
100
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1000
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100
3
10
1
0.1
0.3
1
3
10
30
100
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
10
20
50
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 20 A
V
GS
V
DS
V = 50 V
25 V
10 V
V = 50 V
25 V
10 V
tf
r
d(on)
t
d(off)
t
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
V = 10 V, V = 30 V
PW = 5
μ
s, duty < 1 %
相關(guān)PDF資料
PDF描述
2SK2885 Silicon N Channel MOS FET High Speed Power Switching
2SK2885L Silicon N Channel MOS FET High Speed Power Switching
2SK2885S Silicon N Channel MOS FET High Speed Power Switching
2SK2885 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
2SK2887 Switching(開關(guān)(N溝道MOSFET))
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