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參數(shù)資料
| 型號： | 2SK2869 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SK2869 |
2SK2869
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
Zero gate voltege drain
current
—
—
10
Gate to source cutoff voltage
V
GS(off)
1.5
—
2.5
V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V*
1
I
D
= 10A, V
GS
= 4V*
1
I
D
= 10A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Static drain to source on state R
DS(on)
resistance
—
0.033
0.045
R
DS(on)
|y
fs
|
Ciss
—
0.055
0.07
Forward transfer admittance
10
16
—
S
Input capacitance
—
740
—
pF
Output capacitance
Coss
—
380
—
pF
Reverse transfer capacitance
Crss
—
140
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= 10A, V
GS
= 10V
R
L
= 3
Rise time
—
110
—
ns
Turn-off delay time
—
105
—
ns
Fall time
—
120
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 20A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
40
—
V
I
= 20A, V
= 0
diF/ dt = 50A/
μ
s
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