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參數(shù)資料
| 型號： | 2SK2866 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10P1B, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 413K |
| 代理商： | 2SK2866 |
2SK2866
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
—
0.54
0.75
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3.0
9.0
—
S
Input capacitance
Ciss
—
2040
—
Reverse transfer capacitance
Crss
—
210
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
630
—
pF
Rise time
tr
—
22
—
Turnon time
ton
—
58
—
Fall time
tf
—
36
—
Switching time
Turnoff time
toff
—
190
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
45
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
—
20
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1300
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
16
—
μC
Marking
Lot No.
Note 4
K2866
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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PDF描述 |
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| 2SK2866 | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2869L | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2869S-E | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(2-10S1B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(2-10S2B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2866(F) | 功能描述:MOSFET MOSFET N-Ch 600V 10A Rdson=0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2869L-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK(L)-(2) Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,20A,33m ohm,DPAK-L |
| 2SK2869S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2869S-E | 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| 2SK2872 | 制造商:Distributed By MCM 功能描述:450V 8A 30W Gds Fuji Fet TO-220Fis N-Ch |
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