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參數資料
| 型號： | 2SK2862 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 418K |
| 代理商： | 2SK2862 |
2SK2862
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1 A
—
2.9
3.2
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
0.8
1.7
—
S
Input capacitance
Ciss
—
380
—
Reverse transfer capacitance
Crss
—
40
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
120
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
25
—
Fall time
tf
—
20
—
Switching time
Turnoff time
toff
—
80
—
ns
Total gate charge (gate–source
plus gatedrain)
Qg
—
9
—
Gatesource charge
Qgs
—
5
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 2 A
—
4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
3
A
IDRP
t = 1 ms
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
t = 100 μs
—
12
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
1000
—
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
3.5
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2862
Part No. (or abbreviation code)
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| 2SK2869L | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2869S-E | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(2-10S1B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2862(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SK2864-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A ZP |
| 2SK2865(Q) | 制造商:Toshiba 功能描述:Nch 600V 2A 5@10V PW-Mold Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold |
| 2SK2865(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 2A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SK2865TE16L1NQ | 制造商:Toshiba America Electronic Components 功能描述:POWER MOSFETS |
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