參數(shù)資料
型號(hào)： 2SK2839
元件分類： JFETs
英文描述： 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 2-7H1B, 3 PIN
文件頁(yè)數(shù)： 2/3頁(yè)
文件大小： 133K
代理商： 2SK2839
2SK2839
2002-06-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VDS = 4 V, ID = 5 A
—
45
60
Drainsource ON resistance
RDS (ON)
VDS = 10 V, ID = 5 A
30
40
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
5
11
—
S
Input capacitance
Ciss
—
700
—
Reverse transfer capacitance
Crss
—
150
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
360
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
25
—
Fall time
tf
—
100
—
Switching time
Turnoff time
toff
—
300
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
26
—
Gatesource charge
Qgs
—
20
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 10 A
—
6
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
120
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V, dIDR / dt = 50 A / s
—
140
—
nC
相關(guān)PDF資料
PDF描述
2SK2841 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2841 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2842 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2855 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
2SK2856 UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2841 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2841(F) 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2842 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220NIS
2SK2842(Q,T) 功能描述:MOSFET MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2843 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:600V 10A 45W Gds Toshiba Fet Sc-67
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