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參數(shù)資料
| 型號： | 2SK2802 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK2802 |
2SK2802
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
0.5
A
Drain peak current
I
D(pulse)
Note1
1.0
A
Channel dissipation
Pch
Note2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 100A, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±10
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
—
1.0
AV
DS = 30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±6.5V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
0.5
—
1.5
V
I
D = 10A, VDS = 5V
Static drain to source on state
resistance
R
DS(on)
—
0.2
0.28
I
D = 100 mA
V
GS = 4V
Note2
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.5
I
D = 40 mA
V
GS = 2.5V
Note2
Forward transfer admittance
|y
fs|
0.7
1.2
—
S
I
D = 250 mA
V
DS = 10V
Note2
Input capacitance
Ciss
—
14.0
—
pF
V
DS = 10V
Output capacitance
Coss
—
68
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
3.0
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
0.27
—
sV
GS = 4V, ID = 250 mA
Rise time
t
r
—
1.5
—
sR
L = 40
Turn-off delay time
t
d(off)
—
2.2
—
s
Fall time
t
f
—
2.15
—
s
Note:
2. Pulse test
3.
Marking is “ZV–”
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2803 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 450V TO-220F |
| 2SK2808-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2809-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK2824(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:SILICON N CHANNEL MOS TYPE - Tape and Reel |
| 2SK2825(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 0.1A 3-Pin SSM T/R |
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