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參數(shù)資料
| 型號： | 2SK2846 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-8M1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 406K |
| 代理商： | 2SK2846 |
2SK2846
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2846
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 4.2 (typ.)
High forward transfer admittance
: |Yfs| = 1.7 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
600
V
Draingate voltage (RGS = 20 k)
VDGR
600
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
2
A
Pulse (t = 1 ms)
(Note 1)
IDP
5
A
Drain current
Pulse (t = 100 μs)
(Note 1)
IDP
8
A
Drain power dissipation
PD
1.3
W
Single pulse avalanche energy
(Note 2)
EAS
93
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
0.13
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2846(TP,Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin TPS T/R |
| 2SK2847 | 功能描述:MOSFET N-CH 900V 8A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2847(F) | 功能描述:MOSFET N-ch 900V 8A 1.1 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2847F | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P(N)IS |
| 2SK2847LBMAT | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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