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參數(shù)資料
| 型號(hào)： | 2SK2731T146 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 92K |
| 代理商： | 2SK2731T146 |
2SK2731
Transistors
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Conditions
A
pF
mS
Unit
V
A
V
pF
ns
ID
= 0.1A, VGS = 10V
30
1.0
100
Min.
25
1.5
Typ.
15
10
15
20
90
100
2.8
±10
10
2.5
2.8
Max.
4.5
ID
= 0.1A, VGS = 4V
ID
= 0.1A, VDS = 10V
VDS
= 10V
VGS
= 0V
f
= 1MHz
ID
= 0.1A, VDD 15V
VGS
= 10V
RL
= 150
RG
= 10
ID
= 1mA, VGS = 0V
VGS
= ±20V, VDS = 0V
VDS
= 30V, VGS = 0V
VDS
= 10V, ID = 1mA
IGSS
IDSS
|Yfs
|
Ciss
Symbol
Coss
Crss
tr
tf
V(BR) DSS
VGS (th)
RDS(on)
td (on)
td (off)
Pw ≤ 300ms, Duty cycle ≤ 1%
Static drain-source on-state
resistance
Electrical characteristic curves
0.5
0.3
0.4
0.2
0.1
0
01
2
3
4
5
DRAIN
CURRENT
:
I
D
(A)
DRAIN-SOURCE VOLTAGE : VDS(V)
4V
VGS=3V
10V
8V
6V
5V
Fig.1 Typical Output Characteristics
GATE-SOURCE VOLTAGE : VGS(V)
DRAIN
CURRENT
:
I
D
(A)
1m
2m
5m
10m
20m
100m
200m
50m
500m
01
2
3
4
5
VDS
=10V
Pulsed
Ta=125
°C
75
°C
25
°C
25
°C
Fig.2 Typical Transfer Characteristics
CHANNEL TEMPERATURE : Tch
(
°C)
GA
TE
THRESHOLD
V
O
LT
A
GE
:
V
GS
(th)
(V)
1
1.5
2.5
2
3
0.5
0
50 25
0
25
50
75
100 125 150
VDS=10V
ID=1mA
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
1m 2m
5m
20m
50m
200m 500m
10m
100m
1
DRAIN CURRENT : ID (A)
0.1
0.2
5
2
0.5
1
10
Ta=125
°C
75
°C
25
°C
25
°C
ON-ST
A
TE
RESIST
ANCE
:
R
DS(on)
(
)
ST
A
TIC
DRAIN-SOURCE
VGS=10V
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
Ι )
1m 2m
5m
20m
50m
200m 500m
10m
100m
1
DRAIN CURRENT : ID (A)
1
2
50
20
5
10
100
Ta=125
°C
75
°C
25
°C
25
°C
VGS=4V
Pulsed
ON-ST
A
TE
RESIST
ANCE
:
R
DS(on)
(
)
ST
A
TIC
DRAIN-SOURCE
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙ )
8
7
5
6
4
3
1
2
0
5
10
15
20
25
30
GATE-SOURCE VOLTAGE : VGS (V)
ID =200mA
100mA
ON-ST
A
TE
RESIST
ANCE
:
R
DS(on)
(
)
ST
A
TIC
DRAIN-SOURCE
Ta=25
°C
Pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
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