參數(shù)資料
型號: 2SK2730
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 6/10頁
文件大?。?/td> 51K
代理商: 2SK2730
2SK2730
6
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
di / dt = 100 A /
μ
s
V = 0, Ta = 25
°
C
0
10
20
30
40
50
10000
2000
1000
5000
100
200
500
500
400
300
200
100
0
20
16
12
8
4
40
80
120
160
200
0
1000
200
500
100
20
10
50
0.1
0.3
1
3
10
30
100
tf
r
d(on)
t
d(off)
t
20
10
50
5
V = 0
f = 1 MHz
Ciss
Coss
Crss
V = 100 V
250 V
400 V
V
GS
I
D
= 25 A
V
DS
V = 400 V
250 V
100 V
V = 10 V, V = 30 V
PW = 10
μ
s, duty < 1 %
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
相關(guān)PDF資料
PDF描述
2SK2731 Interface and Switching(接口和開關(guān))
2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching
2SK2738 Silicon N Channel MOS FET High Speed Power Switching
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參數(shù)描述
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