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參數(shù)資料
| 型號(hào)： | 2SK2725 |
| 元件分類： | JFETs |
| 英文描述： | 1.6 ohm, POWER, FET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK2725 |
2SK2725
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.5
—
3.5
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state
resistance
R
DS(on)
—
1.2
1.6
I
D = 3A, VGS = 10V*
1
Forward transfer admittance
|y
fs|
2.5
4.5
—
S
I
D = 3A, VDS = 10V*
1
Input capacitance
Ciss
—
630
—
pF
V
DS = 10V
Output capacitance
Coss
—
250
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
55
—
pF
f = 1MHz
Total gate charge
Qg
—
13.5
—
nc
V
DD = 400V
Gate to source charge
Qgs
—
3.5
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
5.0
—
nc
I
D = 5A
Turn-on delay time
t
d(on)
—
11
—
ns
V
GS = 10V, ID = 3A
Rise time
t
r
—
45
—
ns
R
L = 10
Turn-off delay time
t
d(off)
—40—
ns
Fall time
t
f
—50—
ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
D = 5A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
200
—
ns
I
F = 5A, VGS = 0
diF/ dt = 100A/
s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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