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參數(shù)資料
| 型號(hào)： | 2SK2724 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | 2SK2724 |
2SK2724
3
FORWARD BIAS SAFE OPERATING AREA
V
DS
-
Drain to Source Voltage - V
I
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
d
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
35
30
25
20
15
10
5
0
2
3
4
100
1
10
100
200
1
0
Pulsed
5
10
15
V
GS
= 20 V
V
GS
= 4 V
V
GS
= 10 V
Pulsed
T
ch
= –25 C
25 C
125 C
V
DS
= 10 V
1
10
100
1 000
0.1
1
10
100
I
D(pulse)
= 140 A
I
= 35 A
Powe Dsspaion
LmtedP
T
=30W
R
DSon
Lmted(V
GS
=10V
PW=1ms
T
c
= 25 C
Single Pulse
1 000
PW=100 s
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| 2SK2725 | Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK2727 | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2724-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2726(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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