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參數資料
| 型號： | 2SK2724 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業(yè)級 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2SK2724 |
2SK2724
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 18 A
20
27
m
R
DS(on)2
V
GS
= 4 V, I
D
= 18 A
33
40
m
Gate to Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 18 A
10
23
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V,
V
GS
= 0,
f = 1 MHz
1 200
pF
Output Capacitance
C
oss
570
pF
Reverse Transfer Capacitance
C
rss
270
pF
Turn-On Delay Time
t
d(on)
I
D
= 18 A,
V
GS(on)
= 10 V,
V
DD
= 30 V,
R
G
= 10
35
ns
Rise Time
t
r
280
ns
Turn-Off Delay Time
t
d(off)
160
ns
Fall Time
t
f
170
ns
Total Gate Charge
Q
G
I
D
= 35 A,
V
DD
= 48 V,
V
GS
= 10 V
50
nC
Gate to Source Charge
Q
GS
5.0
nC
Gate to Drain Charge
Q
GD
22
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 35 A, V
GS
= 0
1.0
V
Reverse Recovery Time
t
rr
I
F
= 35 A, V
GS
= 0,
di/dt = 100 A/
μ
s
70
ns
Reverse Recovery Charge
Q
rr
130
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
R
L
V
DD
R
G
PG.
R
G
= 10
V
GS
0
t
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
V
GS(on)
90 %
90 %
90 %
10 %
0
10 %
I
D
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
t = 1 s
Duty Cycle
≤
1 %
D.U.T.
R
L
V
DD
PG.
50
I
G
= 2 mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2724-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2726(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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