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參數(shù)資料
| 型號(hào)： | 2SK2614(2-7B5B) |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B5B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 267K |
| 代理商： | 2SK2614(2-7B5B) |
2SK2614
2004-08-30
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 50 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VDS = 4 V, ID = 5 A
—
0.055
0.08
Drainsource ON resistance
RDS (ON)
VDS = 10 V, ID = 10 A
—
0.032
0.046
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
7
13
—
S
Input capacitance
Ciss
—
900
—
Reverse transfer capacitance
Crss
—
130
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
370
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
25
—
Fall time
tf
—
30
—
Switching time
Turnoff time
toff
Duty ≤ 1%, tw = 10 s
—
100
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
25
—
Gatesource charge
Qgs
—
19
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 40 V, VGS = 10 V, ID = 20 A
—
6
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
50
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
60
—
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / s
—
45
—
C
Marking
0 V
10 V
VGS
R
L=
3
VDD ≈ 30 V
ID = 10 A
OUT
4.
7
K2614
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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