參數(shù)資料
型號(hào)： 2SK2608
元件分類(lèi)： JFETs
英文描述： 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： LEAD FREE, 2-10P1B, SC-46, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 414K
代理商： 2SK2608
2SK2608
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
—
3.73
4.3
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 1.5 A
0.65
2.6
—
S
Input capacitance
Ciss
—
750
—
Reverse transfer capacitance
Crss
—
10
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
70
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
55
—
Fall time
tf
—
30
—
Switching time
Turnoff time
toff
—
110
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
25
—
Gatesource charge
Qgs
—
13
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 3 A
—
12
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
3
A
Pulse drain reverse current
(Note 1)
IDRP
—
9
A
Forward voltage (diode)
VDSF
IDR = 3 A, VGS = 0 V
—
1.9
V
Reverse recovery time
trr
—
1200
—
ns
Reverse recovery charge
Qrr
IDR = 3 A, VGS = 0 V, dIDR / dt = 100 A / s
—
8.5
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2608
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK2610 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2611 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2614(2-7B2B) 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2614(2-7B2B) 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2614(2-7B1B) 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2608(F) 制造商:Toshiba 功能描述:Nch 900V 3A 4.3@10V TO220AB Bulk
2SK2610 功能描述:MOSFET N-CH 900V 5A TO-3PN RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2610(F) 制造商:Toshiba 功能描述:Nch 900V 5A 2.5@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 5A 2.5@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-3PN
2SK2610(F,T) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 5A 3PIN TO-3P(N) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 5A TO-3PN
2SK2610 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P
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