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參數(shù)資料
| 型號： | 2SK2597 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
| 中文描述： | ? -基站信道的功率MOSFET的為900兆赫波段功率放大的蜂窩電話 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 2SK2597 |
2SK2597
5
APPLICATION CIRCUIT EXAMPLE (f = 960 MHz)
IN
OUT
To Gate Bias
Circuit
To Drain Bias
Circuit
To Gate Bias
Circuit
To Drain Bias
Circuit
Teflon substrate (t = 0.8 mm)
: Through hole
30 pF
30 pF
20 pF
20 pF
5 pF
1 pF
5 pF
2 pF
1 pF
13
pF
DUT
Notes on Handling
This product internally uses beryllie porcelain (beryllium oxide). If powder or vapor of beryllium oxide enters your
respiratory organs, you will have a difficulty in breathing, which is dangerous. Therefore, do no disassemble or
chemically process the product.
Be sure to abolish the product separately from general industrial wastes or garbage.
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