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參數(shù)資料
| 型號(hào)： | 2SK2597 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
| 中文描述： | ? -基站信道的功率MOSFET的為900兆赫波段功率放大的蜂窩電話 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 2SK2597 |
1995
PRELIMINARY DATA SHEET
SILICON POWER MOS FIELD EFFECT TRANSISTOR
2SK2597
N-CHANNEL SILICON POWER MOSFET
FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE
POWER AMPLIFICATION
FEATURES
High output, high gain
P
O
= 100 W, G
L
= 13 dB (TYP.) (f = 900 MHz)
P
O
= 90 W, G
L
= 12 dB (TYP.) (f = 960 MHz)
Low intermodulation distortion
Covers all base station frequencies such as 800-MHz PDC
and GSM
High-reliability gold electrodes
Hermetic sealed package
Internal matching circuit
Push-pull structure
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Drain-source voltage
V
DS
60
V
Gate-source voltage
V
GS
7
V
Drain current (D.C.)
I
D
15
Note
A
Total power dissipation
P
T
290
W
Thermal resistance
R
th
0.6
C/W
Channel temperature
T
ch
200
C
Storage temperature
T
stg
–65 to +150
C
Note
Per side
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Gate leakage current
I
GSS
V
GS
= 7 V
1
μ
A
Cut-off voltage
V
GS(off)
V
DS
= 5 V, I
D
= 50 mA
1.5
4
V
Drain current
I
DSS
V
DS
= 60 V
2
mA
Mutual conductance
g
m
V
DS
= 5 V, I
D
= 3 A,
I
D
= 100 mA
2.0
S
Output power
P
O
f = 960 MHz, V
DD
= 30 V
80
90
W
Drain efficiency
η
D
I
DQ
= 200 mA
×
2, P
in
= 40 dBm
35
40
%
Linear gain
G
L
f = 960 MHz, V
DD
= 30 V
I
DQ
= 200 mA
×
2, P
in
= 30 dBm
11
12
dB
Third intermodulation distortion
IM
3
f = 900 MHz,
f = 0.1 MHz, V
DD
= 30 V
I
DQ
= 200 mA
×
2, P
O
= 42 dBm
–38
dBc
G1
G2
D1
D2
3.3±0.3
φ
S
45
45
28.0±0.3
13.5±0.3
3.2±0.2
3.2±0.2
1.4
1
1
21.5±0.3
4
1
0
2
G
1
, G
2
: gate
D
1
, D
2
: drain
S : source
Flange is connected to the source.
Document No. P10252EJ1V0DS00 (1st edition)
Date Published October 1995 P
Printed in Japan
The information in this document is subject to change without notice.
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