參數(shù)資料
型號： 2SK2596BXTL-E
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： SC-62, UPAK-3
文件頁數(shù)： 4/10頁
文件大?。?/td> 232K
代理商： 2SK2596BXTL-E
2SK2596
REJ03G0207-0400 Rev.4.00 Nov 08, 2007
Page 3 of 9
Tc = -25°C
25
°C
75
°C
-10
-6
-2
2
6
10
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Input
Capacitance
Ciss
(pF)
VDS = 0
f = 1 MHz
Output Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Output
Capacitance
Coss
(pF)
100
0.1
20
50
10
2
1
5
0.2
0.5
1
2
5
10
20
VGS = 0
f = 1 MHz
100
0.1
20
50
10
2
1
5
0.2
0.5
1
2
5
20
VGS = 0
f = 1 MHz
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Drain to Gate Voltage VDG (V)
Reverse
Transfer
Capacitance
Crss
(pF)
0
Output Power, Drain Efficiency
vs. Input Power
Output
Power
Po
(W)
Input Power Pin (mW)
Drain
Efficiency
η
D
(%)
100
80
60
40
20
0.01
10
2
1
5
0.2
0.5
0.1
0.02
0.05
0.01
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current ID (A)
Drain
to
Source
Saturation
Voltage
V
DS(sat)
(V)
0.02
0.05
0.1
0.2
0.5
1
VGS = 10 V
Pulse Test
-25
Ambient Temperature Ta (°C)
Gate
to
Source
Cutoff
Voltage
V
GS(off)
(V)
Gate to Source Cutoff Voltage vs.
Ambient Temperature
0
25
50
75
100
125
1 mA
10 mA
VDS = 12 V
1.2
0.8
1.0
0.6
0.2
0.4
24
20
22
18
14
16
2.5
1.5
2.0
1.0
0.5
100
60
80
40
0
20
10
VDS = 12 V
IDQ = 50 mA
f = 836.5 MHz
Po
η
D
I
D = 0.1
mA
相關(guān)PDF資料
PDF描述
2SK2598(2-10S1B) 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
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