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參數(shù)資料
| 型號： | 2SK2596BXTL-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SC-62, UPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2SK2596BXTL-E |
2SK2596
REJ03G0207-0400 Rev.4.00 Nov 08, 2007
Page 2 of 9
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min.
Typ
Max.
Unit
Test Conditions
Zero gate voltage drain current
IDSS
—
10
A
VDS = 12 V, VGS = 0
Gate to source leak current
IGSS
—
±5.0
A
VGS = ±10 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.1
V
VDS = 12 V, ID = 2 mA
Input capacitance
Ciss
—
22
—
pF
VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance
Coss
—
10.5
—
pF
VDS = 12 V, VGS = 0, f = 1 MHz
30.2
31.5
—
dBm
Output Power
Pout
1.05
1.4
—
W
Drain Efficiency
ηD
45
55
—
%
VDS = 12 V, IDQ = 50 mA
f = 836.5 MHz, Pin = 63 mW
Main Characteristics
0
50
100
150
200
0
2468
10
4 V
3 V
VGS = 2 V
5 V
6 V
8 V
10
V
0
12345
Tc = -25°C
25
°C
75
°C
1.0
0.2
0.5
0.1
0.02
0.05
0.01
0.02
0.05
0.1
0.2
0.5
1
Tc = -25°C
25
°C
75
°C
4
2
3
1
3.0
2.0
2.5
1.5
1.0
0.5
1.0
0.6
0.8
0.4
0.2
Channel
Power
Dissipation
Pch
(W)
Case Temperature Tc (
°C)
Maximum Channel Power
Dissipation Curve
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
VDS = 12 V
Pulse Test
Pulse test
VDS = 12 V
Pulse Test
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain Current ID (A)
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance
vs. Drain Current
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