參數(shù)資料
型號: 2SK2569
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應晶體管
文件頁數(shù): 2/8頁
文件大?。?/td> 40K
代理商: 2SK2569
2SK2569
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch*
2
50
V
Gate to source voltage
±
20
V
Drain current
0.2
A
Drain peak current
0.4
A
Channel dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
10
μ
s, duty cycle
1 %
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
50
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltage drain current I
DSS
Gate to source leak current
1.0
μ
A
μ
A
V
DS
= 40 V, V
GS
= 0
V
GS
=
±
16 V, V
DS
= 0
I
D
= 10
μ
A, V
DS
= 5 V
I
D
= 100 mA
V
GS
= 4 V*
1
I
D
= 40 mA
V
GS
= 2.5 V*
1
I
D
= 100 mA
V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
GSS
V
GS(off)
R
DS(on)1
±
2.0
Gate to source cutoff voltage
0.5
1.5
V
Static drain to source on state
resistance
2.0
2.6
Static drain to source on state
resistance
R
DS(on)2
3.1
5.0
Foward transfer admittance
|y
fs
|
0.13
0.23
S
Input capacitance
Ciss
14.0
pF
Output capacitance
Coss
17.2
pF
Reverse transfer capacitance
Crss
1.73
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
40
μ
s
μ
s
μ
s
μ
s
V
GS
= 10 V, I
D
= 100 mA
R
L
= 300
Rise time
86
Turn-off delay time
1120
Fall time
Notes
430
1. Pulse Test
2. Marking is "ZN–"
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