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參數(shù)資料
| 型號(hào)： | 2SK2554 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK2554 |
2SK2554
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 40 A
V
GS
= 10 V*
1
I
D
= 40 A
V
GS
= 4 V*
1
I
D
= 40 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
100
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
4.5
6
m
—
5.8
10
m
Forward transfer admittance
|y
fs
|
50
80
—
S
Input capacitance
Ciss
—
7700
—
pF
Output capacitance
Coss
—
4100
—
pF
Reverse transfer capacitance
Crss
—
760
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
60
—
ns
I
D
= 40 A
V
GS
= 10 V
R
L
= 0.75
Rise time
—
420
—
ns
Turn-off delay time
—
1200
—
ns
Fall time
—
900
—
ns
Body to drain diode forward
voltage
—
0.95
—
V
I
F
= 75 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse Test
t
rr
—
105
—
ns
I
= 75 A, V
= 0
diF / dt = 50 A /
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2554-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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| 2SK2556 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2557 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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