參數(shù)資料
型號: 2SK2498
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大小: 131K
代理商: 2SK2498
MOS FIELD EFFECT TRANSISTOR
2SK2498
DESCRIPTION
2SK2498 is N-Channel MOS Field Effect Transistor designed for
high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS (on)
1
9 m
(V
GS
= 10 V, I
D
= 25 A)
R
DS (on)
2
14 m
(V
GS
= 4 V, I
D
= 25 A)
Low C
iss
C
iss
= 3400 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C)
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
*
PW
10
μ
s, Duty Cycle
1 %
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±
20
±
50
±
200
35
2.0
150
V
V
A
A
W
W
C
–55 to +150 C
50
250
A
mJ
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1995
DATA SHEET
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.1
1.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
1 2 3
3
4
1
1
1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
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