參數(shù)資料
型號(hào): 2SK2512
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁數(shù): 1/8頁
文件大小: 82K
代理商: 2SK2512
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Low On-Resistance
R
DS (on)1
= 15 m
(V
GS
= 10 V, I
D
= 23 A)
R
DS (on)2
= 23 m
(V
GS
= 4 V, I
D
= 23 A)
Low C
iss
C
iss
= 2 100 pF TYP.
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C)
Channel Temperature
Storage Temperature
*
PW
10
μ
s, Duty Cycle
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±
20
±
45
±
180
35
2.0
150
V
V
A
A
W
W
C
–55 to +150 C
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2SK2512
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
1995
DATA SHEET
Document No. D10291EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.1
1.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
1 2 3
3
4
1
1
1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Gate
Protection
Diode
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