參數(shù)資料
型號(hào): 2SK2488
廠商: NEC Corp.
元件分類(lèi): MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 118K
代理商: 2SK2488
MOS FIELD EFFECT TRANSISTOR
2SK2488
DESCRIPTION
The 2SK2488 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS (on)
= 1.2
(V
GS
= 10 V, I
D
= 5.0 A)
Low C
iss
C
iss
= 2 900 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C)
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
*
PW
10
μ
s, Duty Cycle
1 %
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
±
30
±
10
±
20
150
3.0
150
V
V
A
A
W
W
C
–55 to +150 C
10
294
A
mJ
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10284EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1995
DATA SHEET
1.0±0.2
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
5.45
4.7 MAX.
1.5
1
6
7
1
2
3
4
Body
Diode
Source
Drain
Gate
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