參數(shù)資料
型號(hào): 2SK2393-E
元件分類: JFETs
英文描述: 8 A, 1500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PL, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 100K
代理商: 2SK2393-E
2SK2393
REJ03G1010-0300 Rev.3.00 Apr 28, 2009
Page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
400
300
200
100
0
50
100
150
200
100
30
10
3
1
0.3
0.1
20
50
100
200
500 1000 2000
10
s
1 ms
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
Ta = 25
°C
DC
Opera
tion
(Tc
=
25
°C)
10
8
6
4
2
0
10
20
30
40
50
Pulse Test
VGS = 5 V
15 V
8 V
7 V
6 V
10 V
5
4
3
2
1
0
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
24
6
8
10
20
16
12
8
4
0
Pulse Test
4
8
12
16
20
ID = 5 A
1 A
2 A
0.1
0.3
1
3
10
30
100
20
10
2
5
1
0.2
0.5
15 V
VGS = 10 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SK2403 3 A, 450 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2414-AZ 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2414-Z-AZ 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2417 7.5 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2463T100 2 A, 60 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2394 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Noise HF Amp Applications
2SK2394_12 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications
2SK2394-6-TB-E 功能描述:JFET N-CH 15V 50MA CP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET(結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān))@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS(開):200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW
2SK2394-7-TB-E 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2SK2395 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Noise HF Amp Applications