- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33489 > 2SK2382 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK2382 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 408K |
| 代理商： | 2SK2382 |
2SK2382
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
—
―
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
―
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
―
0.13
0.18
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
10
17
―
S
Input capacitance
Ciss
—
2000
―
Reverse transfer capacitance
Crss
—
200
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
600
—
pF
Rise time
tr
—
35
—
Turnon time
ton
—
50
—
Fall time
tf
—
10
—
Switching time
Turnoff time
toff
—
66
—
ns
Total gate charge
(Gatesource plus gatedrain)
Qg
—
40
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 100 V, VGS = 10 V, ID = 15 A
—
15
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
15
A
Pulse drain reverse current
(Note 1)
IDRP
—
45
A
Forward voltage (diode)
VDSF
IDR = 15 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
180
—
ns
Reverse recovered charge
Qrr
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
1.13
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2382
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2388 | 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2391 | 20 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2393 | 2.8 ohm, POWER, FET |
| 2SK2394G | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2394H | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2382(Q) | 制造商:Toshiba 功能描述:Nch 200V 15A 0.18@10V TO220NIS 制造商:Toshiba 功能描述:Nch 200V 15A 0.18@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 200V 15A TO220NIS |
| 2SK2382_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2382_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2383 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2385 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 36A 3PIN TO-220(NIS) - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。