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參數(shù)資料
| 型號： | 2SK2382 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 408K |
| 代理商： | 2SK2382 |
2SK2382
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2382
Switching Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.13 (typ.)
High forward transfer admittance
: |Yfs| = 17 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 200 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
200
V
Draingate voltage (RGS = 20 k)
VDGR
200
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
15
A
Drain current
Pulse (Note 1)
IDP
45
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
166
mJ
Avalanche current
IAR
15
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.2 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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| 2SK2382(Q) | 制造商:Toshiba 功能描述:Nch 200V 15A 0.18@10V TO220NIS 制造商:Toshiba 功能描述:Nch 200V 15A 0.18@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 200V 15A TO220NIS |
| 2SK2382_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2382_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2383 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2385 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 36A 3PIN TO-220(NIS) - Rail/Tube |
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