參數(shù)資料
型號(hào)： 2SK2373ZE-TR-E
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-59A, MPAK-3
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 122K
代理商： 2SK2373ZE-TR-E
2SK2373
Rev.3.00 Dec 27, 2006 page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.2
A
Drain peak current
ID(pulse)*
1
0.4
A
Body to drain diode reverse drain current
IDR
0.2
A
Channel dissipation
Pch*
2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤100 s, duty cycle ≤ 10 %
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 100
A, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±2
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
1
A
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 10
A, VDS = 5 V
—
1.4
7.5
ID = 20 mA, VGS = 4 V*
2
Static drain to source on state
resistance
RDS(on)
—
1.0
7.0
ID = 10 mA, VGS = 10 V*
2
Input capacitance
Ciss
—
17.8
—
pF
Output capacitance
Coss
—
25.4
—
pF
Reverse transfer capacitance
Crss
—
3.7
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
50
—
ns
Rise time
tr
—
125
—
ns
Turn-off delay time
td(off)
—
660
—
ns
Fall time
tf
—
400
—
ns
ID = 0.1 A, VGS = 10 V,
RL = 100
, PW = 2 s
Note:
2. Pulse Test
相關(guān)PDF資料
PDF描述
2SK2377 20 A, 170 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F
2SK2382 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2388 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2391 20 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2393 2.8 ohm, POWER, FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2374 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2375 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2376 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK2376(Q) 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.017Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2376(SM,Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-220SM
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