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參數(shù)資料
| 型號(hào)： | 2SK2372 |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, MP-88, 3 PIN |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大?。?/td> | 263K |
| 代理商： | 2SK2372 |
Data Sheet D13192EJ3V0DS
7
2SK2371, 2372
PACKAGE DRAWING (Unit: mm)
TO-3P (MP-88)
15.7 MAX.
3.2
±0.2
4.5
±
0.2
5.0
TYP.
1.0
TYP.
3.0
±
0.25
20.0
±
0.25
19
MIN.
2.2
±0.2
5.45 TYP.
1.0
±0.2
4.7 MAX.
1.5 TYP.
6.0
TYP.
2.8
±0.1
0.6
±0.1
1
2
3
4
φ
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Body
Diode
Source
Drain
Gate
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
<R>
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PDF描述 |
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| 2SK2371 | 25 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2373ZE-TR-E | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2377 | 20 A, 170 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F |
| 2SK2382 | 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2388 | 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2372-A | 制造商:Renesas Electronics 功能描述:Nch 500V 25A 270m@10V TO3P Bulk 制造商:Renesas Electronics Corporation 功能描述:2SK2372-A Series 500 V 0.27 Ohm 160 W 95 nC Switching Power Mosfet - TO-3P |
| 2SK2373 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2373ZE-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2373ZE-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2374 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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