參數(shù)資料
型號(hào): 2SK2372-A
元件分類(lèi): JFETs
英文描述: 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-88, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 112K
代理商: 2SK2372-A
2SK2371/2SK2372
3
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
TC - Case Temperature - (°C)
dT
-
Percentage
of
Rated
Power
-
%
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - (V)
ID
-
Drain
Current
-
(A)
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
VDS - Drain to Source Voltage - (V)
ID
-
Drain
Current
-
(A)
0
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
150
TC - Case Temperature - (°C)
P
T
-
Total
Power
Dissipation
-
(W)
120
0
60
90
30
60
40
80
100
120
180
210
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - (V)
ID
-
Drain
Current
-
(A)
1
1 000
10
100
0.1
1.0
Pulsed
515
10
20
15
10
5
0
8 V
6 V
5 V
VGS = 10 V
510
15
100
1
10
0.1
0
VDS = 10 V
Pulsed
Tch = 125 °C
75 °C
25 °C
–25 °C
100
80
60
40
20
ID (pulse)
TA = 25 °C
Single Pulse
PW
=
10
s
100
s
RDS
(on)
Limited
( VGS
= 10
V)
Power
Dissipation
Limitd
10
ms
1 ms
2SK2371
2SK2372
ID (DC)
ID (DC)
相關(guān)PDF資料
PDF描述
2SK2372 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2371 25 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2373ZE-TR-E 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2377 20 A, 170 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F
2SK2382 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2373 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK2373ZE-TL-E 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK2373ZE-TR-E 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK2374 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2375 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET