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參數(shù)資料
| 型號(hào)： | 2SK2372-A |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-88, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | 2SK2372-A |
2SK2371/2SK2372
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Drain to Source On-Resistance
RDS(on)
0.2
0.25
VGS = 10 V
2SK2371
0.22
0.27
ID = 13 A
2SK2372
Gate to Source Cutoff Voltage
VGS(off)
2.5
3.5
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
yfs
8.0
S
VDS = 10 V, ID = 13 A
Drain Leakage Current
IDSS
100
A
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±100
nA
VGS =
± 30 V, VDS = 0
Input Capacitance
Ciss
3600
pF
VDS = 10 V
Output Capacitance
Coss
700
pF
VGS = 0
Reverse Transfer Capacitance
Crss
50
pF
f = 1 MHz
Turn-On Delay Time
td(on)
40
ns
ID = 13 A
Rise Time
tr
70
ns
VGS = 10 V
Turn-Off Delay Time
td(off)
160
ns
VDD = 150 V
Fall Time
tf
60
ns
RG = 10
RL = 11.5
Total Gate Charge
QG
95
nC
ID = 25 A
Gate to Source Charge
QGS
20
nC
VDD = 400 V
Gate to Drain Charge
QGD
40
nC
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.0
V
IF = 25 A, VGS = 0
Reverse Recovery Time
trr
500
ns
IF = 25 A, VGS = 0
Reverse Recovery Charge
Qrr
4.5
C
di/dt = 50 A/
S
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
VGS = 20-0 V
PG.
RG = 25
50
D.U.T.
L
VDD
PG.
RG = 10
D.U.T.
RL
VDD
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1US
Duty Cycle
≤ 1%
VGS
Wave
Form
ID
Wave
Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
Test Circuit 3 Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2372-A | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2372 | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2371 | 25 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2373ZE-TR-E | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2377 | 20 A, 170 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2373 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2373ZE-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2373ZE-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2374 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2375 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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