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參數(shù)資料
| 型號： | 2SK2372-A |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-88, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 112K |
| 代理商： | 2SK2372-A |
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2367: RDS(ON) = 0.25
(VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27
(VGS = 13 V, ID = 10 A)
Low Ciss
Ciss = 3600 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS
450/500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±25
A
Drain Current (pulse)*
ID(pulse)
±100
A
Total Power Dissipation (TC = 25
°C)
PT1
160
W
Total Power Dissipation (Ta = 25
°C)
PT2
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 ~ +150
°C
Single Avalanche Current**
IAS
25
A
Single Avalanche Energy**
EAS
446
mJ
* PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25
°C, RG = 25 , VGS = 20 V → 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
1995
DATA SHEET
Document No.
TC-2505
(O.D. No.
TC-8064
Date Published
January 1995 P
Printed in Japan
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Body
Diode
Source
Drain
Gate
3
3.2 ± 0.2
4.7 MAX.
1.5
7.0
2.8 ± 0.1
0.6 ± 0.1
1.0 ± 0.2
2.2 ± 0.2
5.45
15.7 MAX.
4
12
4.5
±
0.2
20.0
±
0.2
3.0
±
0.2
6.0
1.0
19
MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
PACKAGE DIMENSIONS
(in millimeters)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2372-A | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2372 | 25 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2371 | 25 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2373ZE-TR-E | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2377 | 20 A, 170 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2373 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2373ZE-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2373ZE-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2374 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2375 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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