參數(shù)資料
型號: 2SK2329(L)
元件分類: JFETs
英文描述: 0.06 ohm, POWER, FET
封裝: DPAK-3
文件頁數(shù): 6/12頁
文件大?。?/td> 56K
代理商: 2SK2329(L)
2SK2329(L), 2SK2329(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±10
V
I
G = ±200 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±6.5 V, VDS = 0
Zero gate voltage drain current I
DSS
100
AV
DS = 25 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
0.4
1.4
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
0.03
0.04
I
D = 5 A
V
GS = 4 V*
1
0.04
0.06
I
D = 5 A
V
GS = 2.5 V*
1
Forward transfer admittance
|y
fs|10
18
S
I
D = 5 A
V
DS = 10 V*
1
Input capacitance
Ciss
1250
pF
V
DS = 10 V
Output capacitance
Coss
540
pF
V
GS = 0
Reverse transfer capacitance
Crss
120
pF
f = 1 MHz
Turn-on delay time
t
d(on)
20
ns
I
D = 5 A
Rise time
t
r
145
ns
V
GS = 4 V
Turn-off delay time
t
d(off)
225
ns
R
L = 2
Fall time
t
f
125
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
100
ns
I
F = 10 A, VGS = 0,
di
F / dt = 20 A / s
Note
1. Pulse Test
相關(guān)PDF資料
PDF描述
2SK2329(L) 0.06 ohm, POWER, FET
2SK2329L-E 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2329S 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2329L 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2329S 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
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