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參數(shù)資料
| 型號： | 2SK2329-E |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 2SK2329-E |
2SK2393
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Gate Charge Qg (nc)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
5
4
3
2
1
–40
0
40
80
120
160
0
Pulse Test
ID = 5 A
2 A
VGS = 15 V
1 A
0.1
10
2
5
1
0.2
0.5
0.1
0.2
0.5
1
25
10
VDS = 20 V
Pulse Test
25
°C
Tc = –25
°C
75
°C
0.1
0.3
1
3
10
50
20
10
2
5
1
0.5
di/dt = 100 A/
s
VGS = 0, Ta = 25°C
010
20
30
40
50
10000
3000
1000
300
100
30
10
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1000
800
600
400
200
0
20
16
12
8
4
0
40
80
120
160
200
VGS
VDS
VDD = 250 V
400 V
600 V
VDD = 250 V
400 V
600 V
ID = 8 A
0.1
2000
1000
200
500
100
20
50
0.2
0.5
1
2
5
10
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2329L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2329-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2329S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel MOSFET |
| 2SK2330(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-262VAR |
| 2SK2330(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-263VAR |
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