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參數(shù)資料
| 型號(hào)： | 2SK2329-E |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 2SK2329-E |
2SK2393
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
400
300
200
100
0
50
100
150
200
100
30
10
3
1
0.3
0.1
20
50
100
200
500 1000 2000
10
s
1 ms
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
Ta = 25
°C
DC
Opera
tion
(Tc
=
25
°C)
10
8
6
4
2
0
10
20
30
40
50
Pulse Test
VGS = 5 V
15 V
8 V
7 V
6 V
10 V
5
4
3
2
1
0
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
24
6
8
10
20
16
12
8
4
0
Pulse Test
4
8
12
16
20
ID = 5 A
1 A
2 A
0.1
0.3
1
3
10
30
100
20
10
2
5
1
0.2
0.5
15 V
VGS = 10 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2329L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2329-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2329S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel MOSFET |
| 2SK2330(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-262VAR |
| 2SK2330(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-263VAR |
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